[AllUsers-ISR] Convite para palestra sobre transístores orgânicos - 2º Feira, dia 19 de setembro, pelas 12h - Sala de Seminários

Lara Costa lara at isr.uc.pt
Fri Sep 16 15:33:15 WEST 2022



Convite para palestra sobre transístores orgânicos

2º Feira, dia 19 de setembro, pelas 12h

Sala de Seminários 

(junto à antiga biblioteca do DEEC)

 

Na 2º feira, dia 19 de setembro, o Prof. Fabio Biscarini visitará o DEEC e o
Instituto de Telecomunicações (IT) e dará um breve seminário sobre
transístores orgânicos na sala de seminários junto à antiga biblioteca do
DEEC às 12h.

O Prof. Biscarini é Professor na Universidade de Modena and Reggio Emilia
(UNIMORE), em Itália, e coordenador do grupo de Organic Neuroelectronics do
Center for Translational Neurophysiology-Instituto Italiano di Tecnologia in
Ferrara.

O Prof. Bicarini tem um extenso trabalho em dispositivos eletrónicos
implantáveis para interfaces homem-máquina, dispositivos neuromórficos e
biossensores. É inventor de 19 patentes e fundou 3 start-ups. Todos serão
bem-vindos.



Prof. Fabio Biscarini

Oscillating Wetting/Dewetting Transitions in Nanoscale Thin Film Growth
Enhance Charge Transport in Organic Thin Film Transistors

We discovered a growth mode of pentacene thin films deposited by high vacuum
sublimation where the morphology vs thickness h “rings” back and forth
between rough 3D films with pyramid islands and smooth 2D films with
ziqqurat islands. The roughness s vs h exhibits seamless coherent
oscillations whose amplitude and wavelength increase as integer multiples of
1.5 ML thickness. The quantized oscillations are reconducted to dynamic
wetting/dewetting transitions involving the upper layers of pentacene film.
Importantly, the transconductance of organic field effect transistors,
either in solid state or electrolyte-gated, exhibits anti-phase oscillations
with one-decade swing. Charge mobilities in the wetting regime exceed ten
cm2/Vs, viz. the highest values reported for thin film pentacene transistors
and comparable to the mobility of pentacene single crystals. This growth
mode overcomes the limitations of charge transport imposed by the roughening
transition, a universal feature of high vacuum growth to date.

 

Cumprimentos,

 

Lara Costa

Gestora de Ciência

Instituto de Sistemas e Robótica

Departamento de Engenharia Eletrotécnica e de Computadores

Pólo II, Universidade de Coimbra

3030-790 Coimbra

Tel: 239 796 217 (Ext: 421113)

 

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